The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 1991
Filed:
Feb. 29, 1988
Applicant:
Inventor:
Kiyoshi Mori, Stafford, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 2312 ;
Abstract
A method and structure for adjustment of the threshold voltage of a vertical metal-oxide-semiconductor transistor. Chemical vapor deposition of doped silicon dioxide and annealing are used to form a voltage-threshold-adjustment region in at least the channel layer of the transistor adjacent to the trench wall.