The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1991
Filed:
Dec. 08, 1989
Applicant:
Inventor:
Kiyoshi Mori, Stafford, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 235 ; 357 234 ;
Abstract
An electrically erasable, progammable, read-only-memory, floating-gate, metal-oxide-semiconductor transistor constructed in a trench extending through layers of P-type and N-type material formed on a semiconductor substrate. The floating-gate transistor is comprised of two source-drain regions, a channel region, a floating gate, a programming gate, and gate-oxide layers and is characterized by a floating-gate to channel capacitance that is small relative to the programming-gate to floating-gate capacitance, thereby allowing charging of the floating gate using programming and erasing voltages of less magnitude than might otherwise be necessary.