Boise, ID, United States of America

Kevin G Donohoe



Average Co-Inventor Count = 1.8

ph-index = 22

Forward Citations = 2,008(Granted Patents)

Forward Citations (Not Self Cited) = 1,914(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 1995-2010

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Areas of Expertise:
Plasma Etching
Semiconductor Devices
High Aspect Ratio Structures
Pulsed Voltage
Gas Distribution Plate
Inductively Coupled Plasma
Three-Dimensional Photonic Structures
Etch Profile Control
Self-Aligned Features
Isolation Stress Reduction
Non-Conformal Layer Formation
Heavy Halogens
109 patents (USPTO):Explore Patents

Title: Kevin G Donohoe: Pioneering Innovations in Semiconductor Technology

Introduction:

Kevin G Donohoe, a seasoned inventor hailing from Boise, ID, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 106 patents, Donohoe's expertise lies in the development of innovative methods for forming semiconductor devices and etching high aspect ratio apertures. Let's delve deeper into his latest patents, career highlights, and notable collaborations.

Latest Patents:

Donohoe's recent patents include groundbreaking advancements in semiconductor device formation and high aspect ratio aperture etching. One of his notable inventions is the use of a plasma source to form a layer during the formation of a semiconductor device. This method allows for the precise creation of capacitors within semiconductor wafers, enhancing their overall performance and efficiency.

Another remarkable patent by Donohoe is the method of forming high aspect ratio apertures using a plasma etch process. By employing two primary etchants at low flows and pressures, combined with a relatively low-temperature environment, this technique enables the precise etching of dielectric materials. The innovative approach pioneered by Donohoe enhances the manufacturing capabilities of semiconductor devices.

Career Highlights:

Having worked with esteemed companies such as Micron Technology Incorporated and more, Donohoe's expertise has made a significant impact on the semiconductor industry. He has demonstrated a deep understanding of semiconductor fabrication processes and has continually pushed the boundaries of technological possibilities through his inventive solutions.

Collaborations:

Throughout his career, Donohoe has had the opportunity to collaborate with notable individuals in the semiconductor field. Two of his notable coworkers include Guy T Blalock and David S Becker. These collaborations have fostered an environment of knowledge exchange and paved the way for groundbreaking innovations.

Conclusion:

Kevin G Donohoe's exceptional contributions to semiconductor technology have solidified his position as a pioneering inventor in the field. His patented inventions relating to semiconductor device formation and high aspect ratio aperture etching have revolutionized manufacturing processes and improved the performance of these devices. With a rich career history and collaborations with industry experts, Donohoe's contributions continue to shape the future of semiconductor technology.

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