Boise, ID, United States of America

Kevin G Donohoe

This inventor holds 109 USPTO granted patents and 1 EPO patent, primarily in Plasma Etching (CPC class H01L2-100). Top assignees: Micron Technology Incorporated, Micron Display Technology, Inc., Micron Semiconductor, Inc.. Active years: 1995-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kevin G Donohoe. Retrieved from https://idiyas.com/inventor/kevin-g-donohoe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 69.7


Average Co-Inventor Count = 1.8

ph-index = 22

Forward Citations = 2,028(Granted Patents)

Forward Citations (Not Self Cited) = 1,914(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:


Years Active: 1995-2010

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Areas of Expertise:
Plasma Etching
Semiconductor Fabrication
High Aspect Ratio
Pulsed Voltage
Etchant
Gas Distribution Plate
Inductively Coupled Plasma
Self-Aligned Features
Three-Dimensional Photonic Structures
Isolation Stress
Etch Profile Control
Processing Chamber
109 patents (USPTO):Explore Patents

Title: Kevin G Donohoe: Pioneering Innovations in Semiconductor Technology

Introduction:

Kevin G Donohoe, a seasoned inventor hailing from Boise, ID, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 106 patents, Donohoe's expertise lies in the development of innovative methods for forming semiconductor devices and etching high aspect ratio apertures. Let's delve deeper into his latest patents, career highlights, and notable collaborations.

Latest Patents:

Donohoe's recent patents include groundbreaking advancements in semiconductor device formation and high aspect ratio aperture etching. One of his notable inventions is the use of a plasma source to form a layer during the formation of a semiconductor device. This method allows for the precise creation of capacitors within semiconductor wafers, enhancing their overall performance and efficiency.

Another remarkable patent by Donohoe is the method of forming high aspect ratio apertures using a plasma etch process. By employing two primary etchants at low flows and pressures, combined with a relatively low-temperature environment, this technique enables the precise etching of dielectric materials. The innovative approach pioneered by Donohoe enhances the manufacturing capabilities of semiconductor devices.

Career Highlights:

Having worked with esteemed companies such as Micron Technology Incorporated and more, Donohoe's expertise has made a significant impact on the semiconductor industry. He has demonstrated a deep understanding of semiconductor fabrication processes and has continually pushed the boundaries of technological possibilities through his inventive solutions.

Collaborations:

Throughout his career, Donohoe has had the opportunity to collaborate with notable individuals in the semiconductor field. Two of his notable coworkers include Guy T Blalock and David S Becker. These collaborations have fostered an environment of knowledge exchange and paved the way for groundbreaking innovations.

Conclusion:

Kevin G Donohoe's exceptional contributions to semiconductor technology have solidified his position as a pioneering inventor in the field. His patented inventions relating to semiconductor device formation and high aspect ratio aperture etching have revolutionized manufacturing processes and improved the performance of these devices. With a rich career history and collaborations with industry experts, Donohoe's contributions continue to shape the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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