The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Sep. 26, 2006
Mirzafer K. Abatchev, Boise, ID (US);
Brad J. Howard, Boise, ID (US);
Kevin G. Donohoe, Boise, ID (US);
Mirzafer K. Abatchev, Boise, ID (US);
Brad J. Howard, Boise, ID (US);
Kevin G. Donohoe, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A system and a process for plasma etching a semiconductor device. The technique comprises periodically applying a heightened voltage bias during the plasma etching process so as to reduce accumulated charge on the surface of the semiconductor device during plasma etching of the device. In one embodiment, a heightened positive voltage and heightened negative voltage is applied to the semiconductor device while plasma etching is occurring to thereby induce charge to be removed from the semiconductor device.