The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Dec. 14, 2006
Applicants:
Kevin G. Donohoe, Boise, ID (US);
David S. Becker, Boise, ID (US);
Inventors:
Kevin G. Donohoe, Boise, ID (US);
David S. Becker, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H05H 1/46 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two primary etchant gases are CHFand CHF, delivered at flow rates on the order of between about 10 sccm and 40 sccm for CHFand between about 10 sccm and 40 sccm for CHF. Small quantities, on the order of 10 sccm or less, of other gases such as CHFand CFmay be added.