logo

For the Inventor, By the Inventor

Taipei, Taiwan

Ken-Hsien Hsieh

This inventor holds 105 USPTO granted patents and 22 published patent applications, primarily in Integrated Circuit Design (CPC class H01L21-31144). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ken-Hsien Hsieh. Retrieved from https://idiyas.com/inventor/ken-hsien-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 105 

% Patents Active = 80.0

Average Co-Inventor Count = 5.2

ph-index = 13

Forward Citations = 713(Granted Patents)

Forward Citations (Not Self Cited) = 624(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Tapei, TW (2016)
  • Hsin-Chu, TW (2016 - 2021)
  • Taipei, TW (2012 - 2024)

Company Filing History:

goldMedal104 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2012-2026

Loading Chart...
Areas of Expertise:
Integrated Circuit Design
Semiconductor Fabrication
Lithography Processes
Optical Proximity Correction
Photo Masks
Fin-like Field Effect Transistor
Two-dimensional Metal Structure
Patterning Methods
Spacer Etching
Multiple Patterning
Tunable Illuminator
Process Monitoring
105 patents (USPTO):Explore Patents
1. 12720861 - Compatible hybrid-cell structure, device having the same, and method (2026-08-25),
2. 12717244 - Tool mismatch reduction using aberration map of the tools (2026-08-25),
3. 12543557 - System and method to reduce layout dimensions using non-perpendicular process scheme (2026-02-03),
4. 12438000 - Methods for integrated circuit design and fabrication (2025-10-07),
5. 12416864 - Tool mismatch reduction using aberration map of the tools (2025-09-16),
6. 12386251 - Method and system to introduce bright field imaging at stitching area of high-NA EUV exposure (2025-08-12),
7. 12360460 - System and method for selecting photolithography processes (2025-07-15),
8. 12300609 - Two-dimensional (2D) metal structure and method of forming the same (2025-05-13),
9. 12266539 - Method of manufacturing semiconductor devices (2025-04-01),
10. 12265334 - Optical proximity correction and photomasks (2025-04-01),
11. 12243741 - Semiconductor structure and method for forming the same (2025-03-04),
12. 12189284 - Method for forming semiconductor device (2025-01-07),
13. 12085867 - Lithography process monitoring method (2024-09-10),
14. 11923300 - Two-dimensional (2D) metal structure (2024-03-05),
15. 11854820 - Spacer etching process for integrated circuit design (2023-12-26),

Title: Ken-Hsien Hsieh: Innovator from Taipei

Introduction: Ken-Hsien Hsieh is a renowned inventor hailing from Taipei, Taiwan. His innovative spirit and dedication to creating groundbreaking solutions have earned him recognition in the field of technology and beyond.

Latest Patents: Ken-Hsien Hsieh holds several patents in various technological domains, showcasing his versatility and creativity in inventing novel solutions to complex problems.

Career Highlights: Throughout his career, Ken-Hsien Hsieh has demonstrated a keen ability to identify gaps in the market and develop unique inventions to address them. His contributions have significantly impacted industries such as electronics, healthcare, and sustainable energy.

Collaborations: Ken-Hsien Hsieh has collaborated with leading research institutions, universities, and companies to further his inventions and bring them to market. His collaborative efforts have resulted in the successful implementation of cutting-edge technologies in real-world applications.

Conclusion: Ken-Hsien Hsieh's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in Taipei and beyond. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…