The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jul. 24, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ru-Gun Liu, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Wei-Liang Lin, Hsinchu, TW;
Yung-Sung Yen, Hsinchu, TW;
Ken-Hsien Hsieh, Hsinchu, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01);
Abstract
In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.