Beijing, China

Keke Zhang

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Liaocheng, CN (2017)
  • Shandong, CN (2017)
  • Beijing, CN (2016 - 2018)

Company Filing History:


Years Active: 2016-2018

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):

Title: Keke Zhang: Innovator in Memory Devices and FinFET Technology

Introduction

Keke Zhang is a prominent inventor based in Beijing, China. He has made significant contributions to the fields of memory devices and semiconductor technology. With a total of 6 patents to his name, Zhang's work is characterized by innovative solutions that enhance device performance and reliability.

Latest Patents

One of Zhang's latest patents is a nonvolatile resistive switching memory device and its manufacturing method. This invention features a nonvolatile resistive switching memory that includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A graphene barrier layer is inserted between the inert metal electrode and the resistive switching functional layer. This design prevents the migration of easily oxidizable metal ions into the inert metal electrode during the programming of the device, thereby improving reliability.

Another notable patent is for an asymmetrical FinFET structure and the method of manufacturing it. This method involves several steps, including the formation of a fin on a substrate and the creation of a sacrificial gate stack. The process aims to restrain harmful short channel effects and enhance device performance, showcasing Zhang's expertise in semiconductor fabrication.

Career Highlights

Keke Zhang has worked at the Chinese Academy of Sciences, where he has been involved in cutting-edge research and development. His work has significantly impacted the advancement of memory technology and semiconductor devices.

Collaborations

Zhang has collaborated with notable colleagues, including Haizhou Yin and Huilong Zhu. These partnerships have contributed to the successful development of his innovative technologies.

Conclusion

Keke Zhang is a distinguished inventor whose work in memory devices and FinFET technology has led to significant advancements in the field. His innovative patents reflect his commitment to enhancing device performance and reliability.

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