The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jul. 19, 2012
Applicants:
Haizhou Yin, Poughkeepsie, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Keke Zhang, Liaocheng, CN;
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28114 (2013.01); H01L 21/28088 (2013.01); H01L 21/31051 (2013.01); H01L 29/42376 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 29/41783 (2013.01); H01L 29/66628 (2013.01);
Abstract
A method for manufacturing a semiconductor device is disclosed. The method comprises: forming a T-shape dummy gate structure on the substrate; removing the T-shape dummy gate structure and retaining a T-shape gate trench; forming a T-shape metal gate structure by filling a metal layer in the T-shape gate trench. According to the semiconductor device manufacturing method disclosed in the present application, the overhang phenomenon and the formation of voids are avoided in the subsequent metal gate filling process by forming a T-shape dummy gate and a T-shape gate trench, and the device performance is improved.