Seoul, South Korea

Kee-Sang Kwon

This inventor holds 16 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kee-Sang Kwon. Retrieved from https://idiyas.com/inventor/kee-sang-kwon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 81.3

Average Co-Inventor Count = 6.8

ph-index = 5

Forward Citations = 80(Granted Patents)


Location History:

  • Seoul, KE (2014)
  • Seoul, KR (2014 - 2020)

Company Filing History:


Years Active: 2014-2020

Loading Chart...
Areas of Expertise:
Semiconductor
Dummy Gate Structure
Fabrication
Metal Silicide Layers
Insulating Gates
Chemical Supplier
Processing Apparatus
Dual Metal Silicide
16 patents (USPTO):Explore Patents

Title: Kee-Sang Kwon: Innovator in Semiconductor Technology

Introduction

Kee-Sang Kwon is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on advancing semiconductor devices and their fabrication methods.

Latest Patents

Among his latest patents is a semiconductor device and method for fabricating the same. This invention includes a gate spacer that defines a trench on a substrate, featuring an upper part and a lower part. The device also incorporates a gate insulating film that extends along the sidewalls and bottom surface of the trench, ensuring it does not contact the upper part of the gate spacer. Additionally, a lower conductive film extends on the gate insulating film along the sidewalls and bottom surface of the trench, while an upper conductive film is positioned on the uppermost part of the gate insulating film on the lower conductive film. Another notable patent involves semiconductor devices that include a dummy gate structure on a fin. This device features a fin protruding from a substrate, with a source/drain region in the fin and a recess region between the first and second portions of the source/drain region. The dummy gate structure overlaps the recess region, complemented by a spacer on the fin adjacent to the sidewall of the dummy gate structure.

Career Highlights

Kee-Sang Kwon is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His extensive experience and expertise have positioned him as a key figure in the industry.

Collaborations

He has collaborated with notable coworkers, including Sang-Jine Park and Bo-un Yoon, contributing to various projects and advancements in semiconductor technology.

Conclusion

Kee-Sang Kwon's work in semiconductor technology exemplifies innovation and dedication. His patents reflect a commitment to enhancing the capabilities of semiconductor devices, making a lasting impact in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…