The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jan. 27, 2016
Ji-min Jeong, Seoul, KR;
Kee-sang Kwon, Seoul, KR;
Jin-wook Lee, Seoul, KR;
Ki-hyung Ko, Yongin-si, KR;
Sang-jine Park, Yongin-si, KR;
Jae-jik Baek, Seongnam-si, KR;
Bo-un Yoon, Seoul, KR;
Ji-won Yun, Hwaseong-si, KR;
Ji-Min Jeong, Seoul, KR;
Kee-Sang Kwon, Seoul, KR;
Jin-Wook Lee, Seoul, KR;
Ki-Hyung Ko, Yongin-si, KR;
Sang-Jine Park, Yongin-si, KR;
Jae-Jik Baek, Seongnam-si, KR;
Bo-Un Yoon, Seoul, KR;
Ji-Won Yun, Hwaseong-si, KR;
Abstract
A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.