The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
May. 23, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Sang-Jine Park, Yongin-si, KR;
Bo-Un Yoon, Seoul, KR;
Young-Sang Youn, Suwon-si, KR;
Jeong-Nam Han, Seoul, KR;
Kee-Sang Kwon, Seoul, KR;
Doo-Sung Yun, Yongin-si, KR;
Byung-Kwon Cho, Suwon-si, KR;
Ji-Hoon Cha, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeongggi-do, KR;
Abstract
A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including a first region on an upper portion of the trench and a second region on a lower portion of the trench, forming a barrier layer by reacting a first amount of etching gas with the first region of the first reaction layer, and etching the oxide layer on a lower portion of the second region by reacting a second amount of etching gas with the second region of the first reaction layer, the second amount of etching gas being greater than the first amount of etching gas.