The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jan. 19, 2016
Sang-jine Park, Yongin-si, KR;
Keun-hee Bai, Incheon, KR;
Kyoung-hwan Yeo, Seoul, KR;
Bo-un Yoon, Seoul, KR;
Kee-sang Kwon, Seoul, KR;
Do-hyoung Kim, Hwaseong-si, KR;
Ha-young Jeon, Hwaseong-si, KR;
Seung-seok Ha, Hwaseong-si, KR;
Sang-Jine Park, Yongin-si, KR;
Keun-Hee Bai, Incheon, KR;
Kyoung-Hwan Yeo, Seoul, KR;
Bo-Un Yoon, Seoul, KR;
Kee-Sang Kwon, Seoul, KR;
Do-Hyoung Kim, Hwaseong-si, KR;
Ha-Young Jeon, Hwaseong-si, KR;
Seung-Seok Ha, Hwaseong-si, KR;
Abstract
Semiconductor devices are provided including a first active fin extending in a first direction and a second active fin spaced apart from the first active fin in a second direction perpendicular to the first direction, the second active fin extending in the first direction, the second active fin having a longer side shorter than a length of a longer side of the first active fin. A first dummy gate extends in the second direction overlapping a first end of each of the first and second active fins. A first metal gate extends in the second direction intersecting the first active fin and overlapping a second end of the second active fin. A first insulating gate extends in the second direction intersecting the first active fin. The first insulating gate extends into the first active fin.