Kumamoto, Japan

Kazunori Inoue

Average Co-Inventor Count = 3.5

ph-index = 11

Forward Citations = 592(Granted Patents)

Forward Citations (Not Self Cited) = 557(Sep 21, 2024)

DiyaCoin DiyaCoin 0.94 

Inventors with similar research interests:


Location History:

  • Amagasaki, JP (1993)
  • Nishigoshi-machi, JP (2005)
  • Kikuchi-gun, JP (2006)
  • Akashi, JP (2009)
  • Kawasaki, JP (2001 - 2012)
  • Kamamoto, JP (2017)
  • Kikuchi, JP (2019)
  • Kumamoto, JP (2002 - 2020)
  • Hyogo, JP (2020)
  • Tokyo, JP (2000 - 2024)


Years Active: 1993-2024

where 'Filed Patents' based on already Granted Patents

91 patents (USPTO):

Title: Kazunori Inoue: A Prolific Innovator in the Field of Thin Film Transistor Substrates

Introduction:

Kazunori Inoue, a renowned inventor hailing from Kumamoto, Japan, has made significant contributions in the realm of thin film transistor (TFT) substrates. With an impressive portfolio of 90 patents, Inoue's expertise lies in the development and manufacturing of innovative display apparatus and related technologies. This article delves into Inoue's latest patents, career achievements, notable collaborations, and highlights his impactful contributions to the industry.

Latest Patents:

Inoue's recent patents demonstrate his proficiency in designing and fabricating cutting-edge thin film transistor substrates. One noteworthy patent involves a novel thin film transistor substrate, along with its manufacturing method and display apparatus. This patent introduces a first oxide semiconductor layer with a unique structure, designed to enhance channel performance. Additionally, a second oxide semiconductor layer is implemented without outward protrusions, particularly in the channel width direction of the drive circuit TFT. These innovations improve the overall performance and reliability of the display apparatus.

Another patent showcases Inoue's advancements in thin film transistor substrate architecture. This patent emphasizes the utilization of opening and gate insulation films, combined with a semiconductor channel film made of oxide semiconductor. The incorporation of source and drain electrodes, as well as the implementation of source and drain upper-layer electrodes made of oxide, further enhance the substrate's functionality. This inventive design promotes efficient signal transmission and superior performance.

Career Highlights:

Kazunori Inoue's remarkable career can be traced through his associations with esteemed companies within the industry. Notably, he has contributed significantly to Mitsubishi Electric Corporation, a global leader in the electronics sector. During his tenure at Mitsubishi, Inoue played a pivotal role in developing advancements in thin film transistor substrates, particularly for display applications. His tireless efforts and innovative ideas have undoubtedly shaped the field and paved the way for future breakthroughs.

Furthermore, Inoue's tenure at Taiyo Yuden Co., Ltd., a prominent Japanese electronics company, further attests to his expertise and relevance in the industry. His contributions to the company's technological advancements in thin film transistor substrate manufacturing have left a lasting impact. Inoue's collaborative efforts have undoubtedly propelled the progress of display technologies.

Collaborations:

Throughout his career, Kazunori Inoue has had the privilege of collaborating with notable professionals in the field. Notably, he has worked closely with individuals such as Nobuaki Ishiga and Kensuke Nagayama. Their collaborative efforts have resulted in significant advancements in thin film transistor substrates, fostering innovation and driving the industry forward.

Conclusion:

Kazunori Inoue's depth of knowledge and expertise in thin film transistor substrates is evident through his extensive patent portfolio and contributions to the field. Through his pioneering work and collaborations within prestigious companies like Mitsubishi Electric Corporation and Taiyo Yuden Co., Ltd., Inoue has demonstrated his commitment to pushing the boundaries of innovation. His contributions to the development of display apparatus and related technologies are set to shape the future of thin film transistor substrates and enhance our everyday viewing experiences.

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