The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Jun. 27, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kazunori Inoue, Kumamoto, JP;

Koji Oda, Kumamoto, JP;

Kensuke Nagayama, Kumamoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/12 (2006.01); G02F 1/1337 (2006.01); G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1339 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); G09G 3/36 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1337 (2013.01); G02F 1/1339 (2013.01); G02F 1/1368 (2013.01); G02F 1/133514 (2013.01); G02F 1/134309 (2013.01); G09G 3/3655 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1259 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78669 (2013.01); G02F 1/133707 (2013.01); G02F 1/134363 (2013.01); G02F 2001/134372 (2013.01); G02F 2001/136295 (2013.01); G02F 2201/086 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G02F 2201/501 (2013.01);
Abstract

A TFT substrate includes: a first semiconductor layer made of a-Si, disposed on a gate insulation layer, facing to a first gate electrode; a first and a second contact layers made of oxide having semiconductor characteristics and each partially disposed in contact with the first semiconductor layer; a first and a second electrodes connected with the first and the second contact layers, respectively; a second semiconductor layer having the same composition as the first contact layer, disposed on the gate insulation layer, facing to a second gate electrode; a third and a fourth electrodes having the same composition as the first electrode and each partially disposed in contact with the second semiconductor layer; and a pixel electrode made of oxide having conductive characteristics and the same composition as the first contact layer, disposed on an insulation layer in a first region, connected with the second electrode.


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