The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Mar. 08, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Kazunori Inoue, Kumamoto, JP;
Koji Oda, Kumamoto, JP;
Takafumi Hashiguchi, Tokyo, JP;
Takeshi Kubota, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An opening insulation film covers a substrate and is in contact with a side surface of a gate electrode. The opening insulation film is provided with a first opening portion having a side surface on the gate electrode. A gate insulation film made of an oxide insulator is on the gate electrode and the opening insulation film. A semiconductor channel film made of an oxide semiconductor is on the gate insulation film and is encompassed by the first opening portion. Source and drain electrodes are on the semiconductor channel film. A source upper-layer electrode and a drain upper-layer electrode both made of an oxide are provided at least on upper surfaces of the source electrode and the drain electrode, respectively. An interlayer insulation film made of an oxide has a portion provided on the source upper-layer electrode and the drain upper-layer electrode and is in contact the semiconductor channel film.