Mitsubishi Electric Corporation

Taiyo Yuden Co., Ltd.

Fujitsu Corporation

Mitsubishi Denki Kabushiki Kaisha

Fujitsu Media Devices Limited

Hitachi, Ltd.

Matsushita Electric Industrial Co., Ltd.

Advanced Display, Inc.

Other

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Nec Corporation

Fujitsu Hitachi Plasma Display Limited

Kabushiki Kaisha Advanced Display

Hitachi Plasma Patent Licensing Co., Ltd.

Kazunori Inoue

Nobuaki Ishiga

Kensuke Nagayama

Takashi Matsuda

Naoki Tsumura

Osamu Toyoda

Koji Oda

Michio Miura

Yusuke Yamagata

Jyouji Kimura

Kazuhiro Matsumoto

Masaru Aoki

Shogo Inoue

Naoki Nakagawa

Akira Tokai

Nobuhiro Nakamura

Takumi Nakahata

Takuji Yoshida

Toshihiko Iwasaka

Keiichi Betsui

Tsutomu Miyashita

Fumihiro Namiki

Toru Takeguchi

Shunichi Aikawa

Suguru Warashina

Motonari Kifune

Toshio Araki

Kazuo Sakushima

Keiji Tsuda

Takaharu Konomi

Rii Hirano

Kazumasa Kawase

Saburou Morita

Yasuyoshi Ito

Takeshi Kubota

Kazuhiro Kobayashi

Takeshi Ono

Satoru Matsuda

Hitoshi Hirakawa

Yuichi Masutani

Masamoto Tanabiki

Kazushi Yamayoshi

Ken Nakashima

Kazuyuki Sakata

Takashi Katayama

Munehito Kumagai

Shinichi Yano

Yojiro Shimada

Ken Imamura

Harumi Murakami

Reiko Noguchi

Tokihiro Nishihara

Shinji Taniguchi

Jun Tsutsumi

Masafumi Iwaki

Tsuyoshi Yokoyama

Takaaki Murakami

Shingo Nagano

Shuichi Ohkubo

Masafumi Agari

Kyoko Kawaguchi

Tadayoshi Kosaka

Tadashi Nakatani

Hiroshi Yamamoto

Masayuki Kitajima

Xiaoyu Mi

Takeshi Morita

Koichi Sakita

Takafumi Hashiguchi

Hayashi Ito

Toshiaki Fujino

Hideki Harada

Shigeo Kasahara

Hiroshi Kobayashi

Minoru Hasegawa

Shigeaki Noumi

Shinya Fukuta

Hironori Aoki

Hitoshi Nagata

Osamu Miyakawa

Yoshiaki Nakanishi

Toshihiro Yamashita

Makoto Ishikawa

Hiroshi Uranaka

Manabu Iwakawa

Takumi Kooriike

Takafumi Kikuchi

Akihiko Hosono

Eiji Shibata

Noriyuki Saitou

Yoshinori Numano

Hiroyasu Itoh

Tomoaki Abe

Kazuyuki Fujiwara

Takahito Yamabe

Mituji Yamamoto

Kyosuke Hiwatashi

Kouji Oda

Fumihiro Gotoh

An information providing method is performed in an information providing system. The information providing method includes: acquiring pieces of speed information of a vehicle in association with identification information of an in-vehicle device from the in-vehicle device via roadside antennas, each of the pieces of speed information having been stored in the in-vehicle device each time the vehicle moves a prescribed distance before the vehicle passes by the roadside antennas; and causing an information display device to display evaluation information in association with the identification information, the evaluation information indicating a frequency of occurrence of sudden acceleration or deceleration events of the vehicle obtained from a proportion of differences between calculation values outside a threshold range, the calculation values being calculated on the basis of the pieces of speed information in a prescribed period corresponding to the pieces of speed information stored in the in-vehicle device.

Information providing method and information providing system

A first oxide semiconductor layer of a pixel TFT has a first structure in which a first source electrode and a first drain electrode have, at both end portions thereof, two types of reduction action regions formed by the first oxide semiconductor layer protruding outward in a channel width direction of a first channel portion from both the first source electrode and the first drain electrode. A second oxide semiconductor layer of a drive circuit TFT has a second structure formed without protruding outward in a channel width direction of a second channel portion from a second source electrode and a second drain electrode. A protective insulation film is provided to cover the first oxide semiconductor layer, the first source electrode, and the first drain electrode.

Thin film transistor substrate, method for manufacturing the same, and display apparatus

An opening insulation film covers a substrate and is in contact with a side surface of a gate electrode. The opening insulation film is provided with a first opening portion having a side surface on the gate electrode. A gate insulation film made of an oxide insulator is on the gate electrode and the opening insulation film. A semiconductor channel film made of an oxide semiconductor is on the gate insulation film and is encompassed by the first opening portion. Source and drain electrodes are on the semiconductor channel film. A source upper-layer electrode and a drain upper-layer electrode both made of an oxide are provided at least on upper surfaces of the source electrode and the drain electrode, respectively. An interlayer insulation film made of an oxide has a portion provided on the source upper-layer electrode and the drain upper-layer electrode and is in contact the semiconductor channel film.

Thin film transistor substrate having source and drain upper-layer electrodes

A TFT in which a channel region is formed of an oxide semiconductor is provided. Threshold voltage shift due to holes photoexcited in the vicinity of a source electrode and a drain electrode is prevented so that reliability is enhanced. A lower semiconductor layer is partially provided between an oxide semiconductor layer and a gate insulating film. The lower semiconductor layer is present in at least one of a source overlapping region where the oxide semiconductor layer overlaps a source electrode and a drain overlapping region where the oxide semiconductor layer overlaps a drain electrode. In contrast, a region where the lower semiconductor layer is absent is provided between the source overlapping region and the drain overlapping region.

Thin-film transistor, thin-film transistor substrate, and liquid crystal display device

It is an object of the present invention to provide a technique capable of reducing a contact resistance between source and drain electrodes and a channel region. A thin film transistor includes: a first semiconductor layer provided on a first insulation film lying on a gate electrode and adjacent to a partial region that is part of the first insulation film lying on the gate electrode as seen in plan view; a source electrode and a drain electrode sandwiching the partial region therebetween as seen in plan view; a second insulation film having an opening portion provided over the partial region; and a second semiconductor layer provided on the second insulation film. The second semiconductor layer is in contact with the source electrode and the drain electrode, and is in contact with the partial region and the first semiconductor layer through the opening portion of the second insulation film.

Thin film transistor, thin film transistor substrate, and liquid crystal display device

An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.

Elastic wave device, duplexer using the same, and communication apparatus using the duplexer

A TFT substrate includes: a first semiconductor layer made of a-Si, disposed on a gate insulation layer, facing to a first gate electrode; a first and a second contact layers made of oxide having semiconductor characteristics and each partially disposed in contact with the first semiconductor layer; a first and a second electrodes connected with the first and the second contact layers, respectively; a second semiconductor layer having the same composition as the first contact layer, disposed on the gate insulation layer, facing to a second gate electrode; a third and a fourth electrodes having the same composition as the first electrode and each partially disposed in contact with the second semiconductor layer; and a pixel electrode made of oxide having conductive characteristics and the same composition as the first contact layer, disposed on an insulation layer in a first region, connected with the second electrode.

Thin film transistor substrate and method of manufacturing thin film transistor substrate

An array substrate according to the present invention is a TFT substrate including a pixel TFT and a drive TFT on a substrate, where the pixel TFT includes a first source electrode, a first drain electrode, and an amorphous silicon layer, and the drive TFT includes a third oxide semiconductor layer provided on a gate insulating film while overlapping a second gate electrode in plan view, and a second source electrode and a second drain electrode overlapping the third oxide semiconductor layer in plan view, with a third separation portion separating the second source electrode and the second drain electrode from each other.

Array substrate, liquid crystal display, thin film transistor, and manufacturing method of array substrate

A plurality of pixel electrodes disposed in a matrix are electrically connected with a plurality of first thin film transistors, respectively. Coloring layers in a plurality of colors overlap, in a plan view, with two or more pixel electrodes adjacent to each other in one direction among the plurality of pixel electrodes. Channel layers of the first thin film transistors are covered from above by a coloring laminated body including end parts of the respective coloring layers in at least two colors among the coloring layers in a plurality of colors, the end parts overlapping with each other in the plan view.

Thin film transistor substrate, method of manufacturing the same, and display device

A substrate for a display device, includes: an insulation substrate; an insulation film, which is formed on the insulation substrate and is primarily made of one of silicon oxide and oxidized metal; an inorganic film, which is formed to be in direct contact with the insulation film and has an insulator part that is formed by changing oxide semiconductor into insulator; and a wiring film, which is formed to be in direct contact with the insulator part.

Manufacturing method of substrate for display device and manufacturing method of display device

The present disclosure relates to a method for manufacturing an active matrix substrate. A first laminated film in which a semiconductor film, a first transparent conductive film, and a first metal film are laminated is formed on a substrate. A photoresist pattern having a first part covering a formation area of a channel part of a thin film transistor, a second part covering a formation area of a pixel electrode, and a third part covering formation areas of a source electrode, a drain electrode, and a source line, is formed on the first laminated film. The first metal film, the first transparent conductive film, and the semiconductor film are patterned using the photoresist pattern; the first part is removed and the first metal film and the first transparent conductive film are patterned; and the second part is removed and the first metal film is patterned.

Active matrix substrate and manufacturing method of the same

It is an object to provide a technique capable of suppressing a damage on a semiconductor channel layer due to a process of forming a source electrode and a drain electrode and also suppressing a short channel effect. A thin film transistor includes a gate electrode, a first insulating film, a source electrode, a drain electrode, a second insulating film, and a semiconductor channel layer that includes an oxide semiconductor. The second insulating film is disposed on the first insulating film, the source electrode, and the drain electrode. The semiconductor channel layer is electrically connected to the source electrode and the drain electrode via a first contact hole and a second contact hole provided in the second insulating film.

Thin film transistor, thin film transistor substrate, liquid crystal display device, and method of manufacturing thin film transistor

Device () has: a low-speed interval extraction unit () for extracting, from GPS information, a low-speed interval extending from the location at a first time point at which the measured speed of a vehicle has fallen below a prescribed value, to the location at a second time point at which the speed has exceeded the prescribed value; a vehicle speed transition model generating unit () for generating a model having, as constraint condition, the length and the amount of time of the low-speed interval, for indicating temporal transition of the speed in such a way that the speed continuously increases to the second time point after having decreased from the first time point; and a stop determination unit () for determining that the vehicle has stopped within the low-speed interval, on the condition that an interval in which the speed is zero or less is present within the model.

Method for presenting result of determination of whether vehicle is stopped, device for determining whether vehicle is stopped, and system for determining whether vehicle is stopped

A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.

Thin film transistor substrate and method for manufacturing the same

The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Display and method for manufacturing display

Growing community of inventors

Kumamoto, Japan

Kazunori Inoue