Tokyo, Japan

Kazunobu Ohta

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.9

ph-index = 7

Forward Citations = 164(Granted Patents)


Company Filing History:


Years Active: 2004-2025

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17 patents (USPTO):Explore Patents

Title: Kazunobu Ohta: Innovator in Semiconductor Technology

Introduction

Kazunobu Ohta is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Ohta has made remarkable advancements in the field, particularly in the design and manufacturing of nMOS transistors.

Latest Patents

One of Ohta's latest patents focuses on a semiconductor device that includes a gate electrode designed to apply tensile stress to a silicon substrate. This innovation involves a gate insulating film and a gate electrode made of non-single crystalline silicon, which are provided on a silicon substrate. The process includes using the gate electrode as a mask to implant n-type dopants with a relatively large mass number, such as arsenic or antimony ions, to form the source/drain region of the nMOS transistor. This method results in the amorphization of the gate electrode. Following this, a silicon oxide film is applied to cover the gate electrode at a temperature lower than that required for recrystallization. Thermal processing at approximately 1000° C. exerts high compressive residual stress on the gate electrode while applying high tensile stress to the channel region beneath it. This innovative approach enhances the carrier mobility of the nMOS transistor.

Career Highlights

Kazunobu Ohta has worked with notable companies in the semiconductor industry, including Renesas Electronics Corporation and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise and the development of his patented technologies.

Collaborations

Ohta has collaborated with esteemed colleagues such as Hirokazu Sayama and Hidekazu Oda, further enriching his work in semiconductor innovations.

Conclusion

Kazunobu Ohta's contributions to semiconductor technology, particularly through his innovative patents, have significantly impacted the field. His work continues to influence advancements in nMOS transistor design and manufacturing.

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