The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jun. 30, 2003
Shigeto Maegawa, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Kazunobu Ohta, Tokyo, JP;
Yasuo Inoue, Tokyo, JP;
Masanobu Kohara, Osaka, JP;
Takashi Eura, Osaka, JP;
Natsuro Tsubouchi, Kawanishi, Hyogo, JP;
Shigeto Maegawa, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Kazunobu Ohta, Tokyo, JP;
Yasuo Inoue, Tokyo, JP;
Masanobu Kohara, Osaka, JP;
Takashi Eura, Osaka, JP;
Natsuro Tsubouchi, Kawanishi, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Ion Engineering Research Institute Corporation, Hirakata, JP;
Other;
Abstract
Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam () having a wavelength in a range of 16 to 17 μm is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam () diffuses around a portion which is irradiated with the laser beam (), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (), and does not occur in a portion which is not irradiated with the laser beam (). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile