The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
May. 21, 2003
Hidekazu Oda, Tokyo, JP;
Hirokazu Sayama, Tokyo, JP;
Kazunobu Ohta, Tokyo, JP;
Kouhei Sugihara, Tokyo, JP;
Hidekazu Oda, Tokyo, JP;
Hirokazu Sayama, Tokyo, JP;
Kazunobu Ohta, Tokyo, JP;
Kouhei Sugihara, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device is provided which can suppress leakage current increases by making into silicide. Impurity that suppresses silicide formation reaction (suppression impurity), such as germanium, is introduced into source/drain regions () from their upper surfaces. In the source/drain regions (), a region shallower than a region where the suppression impurity is distributed () is made into silicide, so that a silicide film () is formed in the source/drain regions (). Thus, by making the region shallower than the region () into silicide, it is possible to suppress that silicide formation reaction extends to the underside of the region to be made into silicide. This enables to reduce the junction leakage between the source/drain regions () and a well region.