The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Jul. 22, 2003
Yukio Nishida, Tokyo, JP;
Kazunobu Ohta, Tokyo, JP;
Yukio Nishida, Tokyo, JP;
Kazunobu Ohta, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A gate insulating film, two polysilicon filmsand, and a silicon nitride filmare successively laminated on a semiconductor substratein this order. Each of the polysilicon filmsandcontains phosphorus. The polysilicon filmhas a region having a phosphorus concentration higher than that of the polysilicon film. Gate electrodes, andare formed on the gate insulating filmby partly etching the polysilicon filmsandand the silicon nitride film. In this case, the etching rate of the region of the polysilicon film, having a phosphorus concentration higher than that of the polysilicon film, is higher than that of the polysilicon film. Due to this difference, notches are formed at the bottom portions on side surfaces of respective gate electrodes, and
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