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For the Inventor, By the Inventor

Fuchu, Japan

Katsuro Sasaki

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Hitachi, Ltd., Hitachi Vlsi Engineering Corp., Hitachi Ulsi Engineering Corp.. Active years: 1990-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuro Sasaki. Retrieved from https://idiyas.com/inventor/katsuro-sasaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 95.8

Average Co-Inventor Count = 5.7

ph-index = 13

Forward Citations = 561(Granted Patents)


Location History:

  • Fuchu, JP (1990 - 1992)
  • Tokyo, JP (1991 - 1992)
  • Fuchuu-shi, Tokyo, JP (1993)
  • Buringame, CA (US) (1995)
  • Burlingame, CA (US) (1995 - 1997)
  • Fuchuu, JP (1991 - 1998)
  • Kunitachi, JP (2001 - 2002)

Company Filing History:

goldMedal23 out of 42,731 
 
Hitachi, Ltd.
 patents
silverMedal4 out of 182 
 
Hitachi Vlsi Engineering Corp.
 patents
bronzeMedal2 out of 87 
 
Hitachi Ulsi Engineering Corp.
 patents
4. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1990-2002

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Areas of Expertise:
SRAM
Integrated Circuit
Semiconductor Memory
Fabrication Process
Digital Signal Processor
Storage Circuit
High-Speed Memory
Sense Amplifier
Redundancy Circuit
Layered Structure
Flip-Flop Circuits
Constant Current Circuit
24 patents (USPTO):Explore Patents
1. 6473333 - Storage circuit with layered structure element (2002-10-29),
2. 6282611 - Digital information system, digital audio signal processor and signal converter (2001-08-28),
3. 5834851 - SRAM having load transistor formed above driver transistor (1998-11-10),
4. 5767554 - Semiconductor integrated circuit device and process for fabricating the (1998-06-16),
5. 5731219 - Process for fabricating a semiconductor integrated circuit device (1998-03-24),
6. 5700704 - Process for fabricating a semiconductor integrated circuit device (1997-12-23),
7. 5677887 - Semiconductor memory device having a large storage capacity and a high (1997-10-14),
8. 5656836 - Semiconductor integrated circuit device and process for fabricating the (1997-08-12),
9. 5652457 - Semiconductor integrated circuit device and process for fabricating the (1997-07-29),
10. 5572480 - Semiconductor integrated circuit device and process for fabricating the (1996-11-05),
11. 5444000 - Method of fabricating integrated circuit with improved yield rate (1995-08-22),
12. 5424972 - Carry look ahead circuit (1995-06-13),
13. 5422839 - Semiconductor memory device (1995-06-06),
14. 5239196 - SRAM with dual word lines overlapping drive transistor gates (1993-08-24),
15. 5146427 - High speed semiconductor memory having a direct-bypass signal path (1992-09-08),

Title: The Innovative Journey of Inventor Katsuro Sasaki

Introduction: Katsuro Sasaki, a pioneering inventor hailing from Fuchuu, Japan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Sasaki's latest patents showcase his expertise in the field of robotics, with a focus on developing advanced AI algorithms for autonomous systems.

Career Highlights: Throughout his illustrious career, Sasaki has been at the forefront of technological advancements, with notable achievements in the development of cutting-edge medical devices and renewable energy solutions.

Collaborations: Sasaki has collaborated with leading research institutions and universities worldwide, fostering a culture of innovation and knowledge sharing in the pursuit of groundbreaking inventions.

Conclusion: Inventor Katsuro Sasaki's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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