This inventor holds 8 USPTO granted patents and 2 published patent applications and 9 EPO patents. Top assignee: Nexwafe Gmbh. Active years: 2019-2024.
Company Filing History:
Years Active: 2019-2024
Title: The Innovative Contributions of Kai Schillinger
Introduction
Kai Schillinger is a prominent inventor based in Freiburg, Germany. He has made significant contributions to the field of electronic components, holding a total of 8 patents. His work focuses on advancements in silicon wafer technology and vapor deposition methods.
Latest Patents
One of Schillinger's latest patents is for a silicon wafer designed for electronic components. This innovation features an epitaxially grown silicon layer on a carrier substrate. The silicon layer is removed from the carrier substrate, with p-dopants and n-dopants introduced during the epitaxial growth process. This results in a silicon layer that possesses electrically active p-doping and n-doping, each exceeding 1×10cm. Another notable patent involves a method for the continuous vapor deposition of silicon on substrates. This method includes several steps, such as introducing substrates into a reaction chamber, forming a gaseous mixture, and regulating the introduction of gaseous silicon precursor compounds to achieve optimal deposition.
Career Highlights
Throughout his career, Schillinger has worked with notable organizations, including Nexwafe GmbH and Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. His experience in these companies has allowed him to refine his expertise in silicon technologies and contribute to groundbreaking innovations.
Collaborations
Schillinger has collaborated with several professionals in his field, including Stefan Reber and Frank Siebke. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Kai Schillinger's contributions to the field of electronic components through his patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in silicon technology and vapor deposition methods.