The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Oct. 25, 2018
Nexwafe Gmbh, Freiburg, DE;
Stefan Reber, Gundelfingen, DE;
Kai Schillinger, Freiburg, DE;
Nexwafe GmbH, Freiburg, DE;
Abstract
A method for the continuous vapour deposition of silicon on substrates, including the following steps: a) introducing at least one substrate into a reaction chamber; b) introducing a process gas and at least one gaseous silicon precursor compound into the reaction chamber; c) forming a gaseous mixture of at least one silicon-based intermediate product coexisting with the gaseous silicon precursor compound and the process gas; d) forming a silicon layer by vapour deposition of silicon from the gaseous silicon precursor compound and/or the silicon-based intermediate product on the substrate; e) discharging an excess of the gaseous mixture from the reaction chamber; f) returning at least one of the constituents of the excess of the gaseous mixture, selected from the silicon precursor compound, the silicon-based intermediate product and/or the process gas into the reaction chamber, wherein introducing the gaseous silicon precursor compound into the reaction chamber is regulated such that the molar ratio of the silicon-based intermediate product to the silicon precursor compound has a value of 0.2:0.8 to 0.5:0.5.