The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Sep. 27, 2016
Nexwafe Gmbh, Freiburg, DE;
NexWafe GmbH, Freiburg, DE;
Abstract
A method for producing a semiconductor layer (), including the following method steps: A creating a release layer () on a carrier substrate (); B applying a semiconductor layer () to the release layer (); C detaching the semiconductor layer () from the carrier substrate. The invention is characterized in that, in method step A, the release layer () is created so as to fully cover at least a processing side of the carrier substrate, in that, in method step B, the semiconductor layer () is applied so as to fully cover the release layer () at least on the processing side and partially overlap one or more peripheral sides () of the carrier substrate and in that, between method steps B and C, in a method step C0, regions of the semiconductor layer () that overlap a peripheral side are removed. The invention also relates to a semiconductor wafer, to a device for edge correction, to a detaching unit and to a device for producing a semiconductor layer.