The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

May. 06, 2019
Applicant:

Nexwafe Gmbh, Freiburg, DE;

Inventors:

Stefan Reber, Gundelfingen, DE;

Kai Schillinger, Freiburg, DE;

Benjamin Reichhart, Emmendingen-Wasser, DE;

Nena Milenkovic, Reute, DE;

Assignee:

NexWafe GmbH, Freiburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25F 7/00 (2006.01); H01L 21/683 (2006.01); H01L 21/3063 (2006.01); C25D 17/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C25F 7/00 (2013.01); C25D 17/001 (2013.01); H01L 21/3063 (2013.01); H01L 21/30635 (2013.01); H01L 21/6838 (2013.01); H01L 21/67086 (2013.01);
Abstract

An apparatus for etching one side of a semiconductor layer of a workpiece, including at least one etching basin for receiving an electrolyte, a first electrode which is provided for electrically contacting the electrolyte located in the etching basin, a second electrode which is provided for electrically contacting the semiconductor layer, a electrical power source which is electrically conductively connected to the first and the second electrodes for generating an etching current, and a transport apparatus for transporting the workpiece relative to the etching basin such that a semiconductor layer etching face to be etched can be wetted by the electrolyte in the etching basin. The transport apparatus has a negative pressure holding element for the workpiece, designed to position the workpiece on a retaining face of the workpiece opposite to the etching face by negative pressure, and the second electrode is positioned on the negative pressure holding element such that, when the workpiece is positioned on the negative pressure holding element, the retaining face of the workpiece is contacted by the second electrode. A method for etching one side of a semiconductor layer of a workpiece is also provided.


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