Dresden, Germany

Jürgen Amon


Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2005-2010

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):

Title: Jürgen Amon: Innovator in Semiconductor Technology

Introduction

Jürgen Amon is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of memory cells. With a total of 6 patents to his name, Amon's work has had a substantial impact on the industry.

Latest Patents

One of Jürgen Amon's latest patents is a method for fabricating metallic bit-line contacts. This innovation provides a solution for making contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer. The method involves filling a contact hole with a metal or a metal alloy, and it may include a liner layer between the semiconductor substrate and the metal filling. The semiconductor substrate features a doped region in the contact hole, enhancing the efficiency of the memory cell.

Career Highlights

Amon is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to push the boundaries of technology and contribute to advancements in memory cell design and fabrication.

Collaborations

Throughout his career, Jürgen Amon has collaborated with notable colleagues, including Jürgen Faul and Thomas Schuster. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Jürgen Amon's contributions to semiconductor technology, particularly through his innovative patents, highlight his role as a key figure in the industry. His work continues to influence the development of advanced memory cells, showcasing the importance of innovation in technology.

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