The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Nov. 23, 2004
Jürgen Amon, Dresden, DE;
Jürgen Faul, Radebeul, DE;
Johann Alsmeier, Ottobrunn, DE;
Matthias Goldbach, Dresden, DE;
Albrecht Kieslich, Radebeul, DE;
Ralf Müller, Dresden, DE;
Dirk Offenberg, Kleve-Kellen, DE;
Thomas Schuster, Dresden, DE;
Jürgen Amon, Dresden, DE;
Jürgen Faul, Radebeul, DE;
Johann Alsmeier, Ottobrunn, DE;
Matthias Goldbach, Dresden, DE;
Albrecht Kieslich, Radebeul, DE;
Ralf Müller, Dresden, DE;
Dirk Offenberg, Kleve-Kellen, DE;
Thomas Schuster, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method fabricates a semiconductor structure having a plurality of memory cells that are provided in a semiconductor substrate of a first conductivity type and contains a plurality of planar selection transistors and a corresponding plurality of storage capacitors connected thereto. The selection transistors have respective first and second active regions of a second conductivity type. The first active regions are connected to the storage capacitors and the second active regions are connected to respective bit lines, and respective gate stacks, which are provided above the semiconductor substrate in a manner insulated by a gate dielectric. In this case, a single-sided halo doping is effected, and an excessive outdiffusion of the halo doping zones is prevented by introduction of a diffusion-inhibiting species.