Wappingers Falls, NY, United States of America

Johann Alsmeier

This inventor holds 32 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Siemens Aktiengesellschaft, International Business Machines Corporation, Infineon Technologies Ag. Active years: 1996-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Johann Alsmeier. Retrieved from https://idiyas.com/inventor/johann-alsmeier-xzqd008t

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 87.5


Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 489(Granted Patents)


Location History:

  • Wappinger Falls, NY (US) (1997 - 1999)
  • Falls, NY (US) (2000)
  • Wappingers Falls, NY (US) (1996 - 2004)
  • Radebeul, DE (2002 - 2005)
  • Ottobrunn, DE (2007)

Company Filing History:


Years Active: 1996-2007

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Areas of Expertise:
Semiconductor Structure
Memory Cell
Trench Capacitor
DRAM Cell
Field-Effect Transistor
Threshold Voltage Control
Buried Word Line
High Density DRAM
Oxidation Stress Reduction
Asymmetrical Channel
Integrated Circuits
Dynamic Random Access Memory
32 patents (USPTO):Explore Patents

Title: Johann Alsmeier - Innovator in Semiconductor Technology

Introduction

Johann Alsmeier, based in Wappingers Falls, NY, has made significant contributions to the field of semiconductor technology, earning a remarkable 32 patents throughout his career. His innovative work continues to influence advancements in memory cell fabrication.

Latest Patents

Among his latest patents, two stand out for their intricate methodologies. The first patent describes a method for fabricating a semiconductor structure with multiple memory cells within a semiconductor substrate of a first conductivity type. This innovation features an array of planar selection transistors alongside storage capacitors, optimizing their connectivity and performance. The inclusion of single-sided halo doping alongside a diffusion-inhibiting species ensures the integrity of the halo doping zones, which is crucial for the device's efficacy.

The second patent introduces a unique configuration for a semiconductor memory cell, characterized by a trench with an insulation collar that is only open on one side, eliminating the need for shallow trench isolation. This design allows for oblique implantation techniques that enhance etching and oxidation properties, resulting in a novel layout that streamlines the formation of active areas across multiple memory cells.

Career Highlights

Throughout his career, Johann Alsmeier has worked with renowned companies in the technology sector, including Siemens Aktiengesellschaft and International Business Machines Corporation (IBM). His experience in these prestigious organizations has greatly contributed to his expertise and innovation in semiconductor technologies.

Collaborations

Alsmeier has collaborated with notable colleagues such as Jack Allan Mandelman and Ulrike Gruening. Together, they have driven forward the boundaries of research and development, facilitating advancements that benefit the field of semiconductor technology.

Conclusion

Johann Alsmeier's 32 patents reflect his profound impact on semiconductor technology and innovation. His recent patents illustrate his commitment to pushing the boundaries of what's possible in memory cell design. As technological demands continue to evolve, innovators like Alsmeier remain at the forefront, developing solutions that shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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