The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Dec. 01, 1999
Applicant:
Inventor:
Johann Alsmeier, Wappingers Falls, NY (US);
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
Abstract
A random access memory cell having a trench capacitor formed below the surface of the substrate. A shallow trench isolation is provided to isolate the memory cell from other memory cells of a memory array. The shallow trench isolation includes a top surface raised above the substrate to reduce oxidation stress.
Quick Actions:
Alsmeier, Johann. (2002). Reducing oxidation stress in the fabrication of devices (U.S. Patent No. 6399977). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6399977
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile