Semiconductor memory cell having a trench and a planar selection transistor and method for producing the same

Abstract

A trench () of a semiconductor memory cell () has an insulation collar (), which is open toward the substrate () on just one side (). On the other side (), the insulation collar () rises all the way up to the insulation cover (). There is therefore no need for a shallow trench isolation. The contact () which is buried on one side is formed by oblique implantation, for example with Nor argon, the implantation taking place from a fixedly predetermined direction with an angle of inclination of between 15 and 40°. The implantation substances effect different etching or oxidation properties, etc., of the implanted materials. In combination with this method, it becomes possible to realize a new layout for the semiconductor memory cell (), in which the structures for forming the active areas form long lines () extending over a plurality of adjacent semiconductor memory cells.