Nagoya, Japan

Junya Fujita

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 51(Granted Patents)


Location History:

  • Mei, JP (2015)
  • Mie, JP (2014 - 2017)
  • Nagoya, JP (2017 - 2021)

Company Filing History:


Years Active: 2014-2021

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7 patents (USPTO):Explore Patents

Title: Junya Fujita: Innovator in Semiconductor Technology

Introduction

Junya Fujita is a prominent inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on advancing semiconductor memory devices and their manufacturing methods.

Latest Patents

Fujita's latest patents include a semiconductor memory device that features memory pillars and transistors. This innovative device comprises a semiconductor substrate with a first surface, where a first semiconductor layer and a first transistor are positioned. Additionally, a second semiconductor layer and a second transistor are included, along with a stacked body that contains multiple conductors and memory pillars. Another notable patent involves a semiconductor device that includes a substrate, a transistor with a source layer and a drain layer, and a memory cell array situated above the transistor.

Career Highlights

Throughout his career, Junya Fujita has worked with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His experience in these organizations has allowed him to develop cutting-edge technologies in the semiconductor industry.

Collaborations

Fujita has collaborated with esteemed colleagues, including Fumiki Aiso and Tomonari Shioda. Their joint efforts have contributed to the advancement of semiconductor technologies.

Conclusion

Junya Fujita's innovative work in semiconductor technology has established him as a key figure in the industry. His patents reflect his commitment to enhancing memory devices and their manufacturing processes.

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