The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Mar. 07, 2018
Toshiba Memory Corporation, Minato-ku, JP;
Tomonari Shioda, Yokkaichi, JP;
Junya Fujita, Nagoya, JP;
Tatsuro Nishimoto, Yokkaichi, JP;
Yoshiaki Fukuzumi, Yokkaichi, JP;
Atsushi Fukumoto, Mie, JP;
Hajime Nagano, Yokkaichi, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.