The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Aug. 03, 2011
Satoshi Nagashima, Mie, JP;
Junya Fujita, Mie, JP;
Hideyuki Yamawaki, Mie, JP;
Masahiro Kiyotoshi, Mie, JP;
Hisataka Meguro, Mie, JP;
Satoshi Nagashima, Mie, JP;
Junya Fujita, Mie, JP;
Hideyuki Yamawaki, Mie, JP;
Masahiro Kiyotoshi, Mie, JP;
Hisataka Meguro, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell transistor obtained by sequentially stacking the gate insulation film, the floating gate electrode, the interelectrode insulation film, and the control gate electrode over the channel semiconductor layer. The control gate electrode has a structure obtained by sequentially stacking the semiconductor film, the silicide phase-change suppressing layer, and the silicide film. In addition, the silicide phase-change suppressing layer includes a polycrystalline silicon film in which at least one of C, F, and N is doped in a concentration range of 1×10to 5×10[atom/cm].