Sendai, Japan

Junichi Murota


Average Co-Inventor Count = 4.5

ph-index = 6

Forward Citations = 348(Granted Patents)


Location History:

  • Kodaira, JA (1978)
  • Kodaira, JP (1979)
  • Isehara, JP (1985)
  • Sendai, JP (1990 - 2004)

Company Filing History:


Years Active: 1978-2004

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8 patents (USPTO):Explore Patents

Title: Junichi Murota: Innovator in Semiconductor Technology

Introduction

Junichi Murota is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on improving the efficiency and performance of semiconductor devices.

Latest Patents

Murota's latest patents include a semiconductor device featuring a metal-semiconductor junction designed to reduce contact resistance. This innovative junction consists of a wiring metal layer and a semiconductor layer, with a region doped with n- or p-type impurities to enhance carrier concentration. Another notable patent is for a novel bonded semiconductor wafer, which has a layered structure of semiconductor and insulator layers. This wafer is manufactured using a bonding process and incorporates ion-implanted oxygen in at least one of the insulator layers.

Career Highlights

Throughout his career, Junichi Murota has worked with esteemed organizations such as Nippon Telegraph and Telephone Public Corporation and Tohoku University. His experience in these institutions has allowed him to advance his research and development in semiconductor technologies.

Collaborations

Murota has collaborated with notable colleagues, including Masao Sakuraba and Takashi Matsuura. Their joint efforts have contributed to the advancement of semiconductor innovations.

Conclusion

Junichi Murota's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and manufacturing processes.

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