The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Aug. 19, 2002
Applicant:
Inventors:
Junichi Murota, Sendai, JP;
Yosuke Shimamune, Sendai, JP;
Masao Sakuraba, Sendai, JP;
Takashi Matsuura, Sendai, JP;
Assignee:
President of Tohoku University, Sendai, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/128 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/128 ; H01L 2/13205 ;
Abstract
A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 10 cm or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.