Masao Sakuraba

Title: Masao Sakuraba: Innovator in Semiconductor Technology

Introduction

Masao Sakuraba is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and performance of semiconductor devices.

Latest Patents

One of Sakuraba's latest patents is a semiconductor device featuring a metal-semiconductor junction designed to reduce contact resistance. This innovative junction consists of a wiring metal layer and a semiconductor layer. To achieve a lower contact resistance, a region doped with either n-type or p-type impurities is introduced in the near-surface part of the semiconductor layer, positioned within 10 nm of the metal layer. This high-carrier concentration region is formed by alternately depositing n-type or p-type impurity layers and IV-group semiconductor layers through methods such as vapor-phase growth.

Career Highlights

Throughout his career, Masao Sakuraba has worked with esteemed institutions, including Tohoku University and Kokusai Electric Co., Ltd. His expertise in semiconductor technology has positioned him as a key figure in the advancement of this field.

Collaborations

Sakuraba has collaborated with notable colleagues, including Junichi Murota and Yosuke Shimamune. Their combined efforts have contributed to the development of innovative semiconductor solutions.

Conclusion

Masao Sakuraba's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively.