Company Filing History:
Years Active: 2016-2025
Title: Jung-Wei Lee: Innovator in Semiconductor Technology
Introduction
Jung-Wei Lee is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on advancing semiconductor devices, which are crucial for modern electronics.
Latest Patents
Jung-Wei Lee's latest patents include innovative designs for semiconductor devices. One notable patent describes a semiconductor device with a doped structure. This device features first and second source/drain regions doped with lead (Pb) at a first dopant concentration. The channel region between these S/D regions is also doped with Pb, but at a lower concentration. Additionally, the device includes S/D contacts and a gate electrode positioned over the channel region. Another significant patent involves channel structures that utilize doped two-dimensional (2D) materials for semiconductor devices. This design includes a substrate and a semiconductor structure that suspends over it, comprising a source region, a drain region, and a channel region. The channel region incorporates a doped 2D material layer, enhancing the device's performance.
Career Highlights
Jung-Wei Lee is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in developing cutting-edge technologies that drive advancements in electronics.
Collaborations
Throughout his career, Jung-Wei Lee has collaborated with notable colleagues, including Ching-Hua Lee and Miao-Syuan Fan. These partnerships have contributed to the innovative projects and patents he has developed.
Conclusion
Jung-Wei Lee's contributions to semiconductor technology exemplify his expertise and dedication to innovation. His patents reflect a commitment to enhancing the performance and efficiency of semiconductor devices.