The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Sep. 17, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Miao-Syuan Fan, Hsinchu, TW;
Ching-Hua Lee, Hsinchu, TW;
Ming-Te Chen, Hsinchu, TW;
Jung-Wei Lee, Hsinchu, TW;
Pei-Wei Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/02389 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/02694 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01);
Abstract
A semiconductor device includes a gate structure disposed over a channel region, a source/drain epitaxial layer disposed at a source/drain region, a nitrogen containing layer disposed on the source/drain epitaxial layer, a silicide layer disposed on the nitrogen containing layer, and a conductive contact disposed on the silicide layer.