The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Feb. 03, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/265 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26593 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 21/67201 (2013.01); H01L 21/67213 (2013.01); H01L 21/67745 (2013.01);
Abstract
Embodiments of method for cooling a wafer in an ion implantation process are provided. A method for cooling the wafer in the ion implantation process includes placing the wafer in a process module. The method also includes performing the ion implantation process on the wafer and simultaneously cooling the wafer in the process module. The method further includes removing the wafer from the process module. In addition, the method includes heating up the wafer.