The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Oct. 04, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/02614 (2013.01); H01L 21/28556 (2013.01); H01L 29/0649 (2013.01); H01L 29/6681 (2013.01);
Abstract
A method for forming a fin-based transistor includes forming a fin on a substrate; overlaying at least an upper portion of the fin with nitrogen-based radicals, wherein the nitrogen-based radicals are distributed along a sidewall and over a top surface of the upper portion of the fin with respective different concentrations; and forming an oxide layer over the upper portion of the fin using a thermal oxidation process.