Wen-Chieh Huang

Title: Innovations by Wen-Chieh Huang

Introduction

Wen-Chieh Huang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor structures. His innovative approach has led to the filing of a patent that enhances the performance of FinFET devices.

Latest Patents

Wen-Chieh Huang holds a patent titled "Method of forming oxide layer for FinFET device." This patent describes a method for forming a fin-based transistor, which includes the steps of forming a fin on a substrate, overlaying the fin with nitrogen-based radicals, and subsequently forming an oxide layer over the fin using a thermal oxidation process. This innovative method aims to improve the efficiency and performance of FinFET devices.

Career Highlights

Wen-Chieh Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Ching-Hua Lee and Jung-Wei Lee, who contribute to the innovative environment at Taiwan Semiconductor Manufacturing Company Limited.

Conclusion

Wen-Chieh Huang's contributions to semiconductor technology, particularly through his patent on FinFET devices, highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in semiconductor manufacturing.