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For the Inventor, By the Inventor

Newark, CA, United States of America

Jung Sheng Hoei

This inventor holds 92 USPTO granted patents and 7 published patent applications and 8 EPO patents, primarily in Memory Management (CPC class G06F3-0679). Top assignees: Micron Technology Incorporated, Information Storage Devices, Inc., Intel Corporation. Active years: 1999-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung Sheng Hoei. Retrieved from https://idiyas.com/inventor/jung-sheng-hoei

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 92 

% Patents Active = 96.7

 

Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 289(Granted Patents)

Forward Citations (Not Self Cited) = 240(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Freemont, CA (US) (2013 - 2015)
  • Fremont, CA (US) (2010 - 2017)
  • Boise, ID (US) (2023)
  • Newark, CA (US) (1999 - 2024)

Company Filing History:

goldMedal87 out of 39,176 
 
Micron Technology Incorporated
 patents
silverMedal3 out of 44 
 
Information Storage Devices, Inc.
 patents
bronzeMedal2 out of 56,290 
 
Intel Corporation
 patents

Years Active: 1999-2026

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Areas of Expertise:
Read Disturb Tracking
Reliability Verification
Flash Memory Monitoring
Memory Access Collision
Temperature Management
Dynamic Control
NAND Flash Array
Virtual Blocks
Erase Progress
Charge Loss Compensation
Multi-Plane Operation
Data Verification
92 patents (USPTO):Explore Patents
1. 12658227 - Memory sub-system management based on dynamic control of wordline start voltage (2026-06-16),
2. 12650789 - On-die cross-temperature management for a memory device (2026-06-09),
3. 12645582 - Disturb tracking among multiple erase blocks coupled to a same string (2026-06-02),
4. 12548630 - Media management scanning with unified criteria to alleviate fast and latent read disturb (2026-02-10),
5. 12530287 - Read disturb tracking among multiple erase blocks coupled to a same string (2026-01-20),
6. 12525304 - Reliability based data verification (2026-01-13),
7. 12423227 - Generating virtual blocks using partial good blocks (2025-09-23),
8. 12417035 - Modified read counter incrementing scheme in a memory sub-system (2025-09-16),
9. 12299304 - Automatic wordline status bypass management (2025-05-13),
10. 12271592 - Independent plane architecture in a memory device (2025-04-08),
11. 12216915 - Adaptive read disturb scan (2025-02-04),
12. 12182407 - Monitoring flash memory erase progress using erase credits (2024-12-31),
13. 12131788 - Read counter adjustment for delaying read disturb scans (2024-10-29),
14. 12067290 - On-die cross-temperature management for a memory device (2024-08-20),
15. 12026385 - Automatic wordline status bypass management (2024-07-02),

Title: Innovations by Jung Sheng Hoei: A Pioneer in Memory Technology

Introduction

Jung Sheng Hoei, based in Newark, CA, is a distinguished inventor with a remarkable portfolio of 82 patents. His innovations mainly focus on advancements in memory technology, showcasing his expertise in developing solutions that enhance the performance and reliability of memory devices.

Latest Patents

Among his latest contributions to the field, Hoei has developed two significant patents. The first, titled "Adaptive Read Disturb Scan," presents apparatuses, systems, and methods for optimizing a read disturb scan. This innovation involves determining a delay between consecutive read commands and adapting the scan rate accordingly to improve memory functionality. The second patent, "Monitoring Flash Memory Erase Progress Using Erase Credits," outlines a method to monitor the progress of erase operations in memory devices through an erase credit mechanism. This approach enables accurate tracking of the extent of memory erasure and ensures that operations are efficiently terminated upon reaching predefined thresholds.

Career Highlights

Jung Sheng Hoei has made notable contributions during his tenure at leading technology companies such as Micron Technology Incorporated and Information Storage Devices, Inc. His work in these organizations has been instrumental in pushing the boundaries of memory technology and its applications.

Collaborations

Throughout his career, Hoei has collaborated with talented professionals, including Vishal Sarin and Kishore Kumar Muchherla. Their collective efforts have propelled innovative research and development within the realm of memory solutions.

Conclusion

Jung Sheng Hoei's extensive patent portfolio and collaborative spirit highlight his status as a pivotal figure in the field of memory technology. His ongoing contributions continue to influence the industry, paving the way for future advancements in data storage and management.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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