Inventors with similar research interests:
Location History:
- Freemont, CA (US) (2013 - 2015)
- Fremont, CA (US) (2010 - 2017)
- Boise, ID (US) (2023)
- Newark, CA (US) (1999 - 2024)
Company Filing History:
Years Active: 1999-2025
Title: Innovations by Jung Sheng Hoei: A Pioneer in Memory Technology
Introduction
Jung Sheng Hoei, based in Newark, CA, is a distinguished inventor with a remarkable portfolio of 82 patents. His innovations mainly focus on advancements in memory technology, showcasing his expertise in developing solutions that enhance the performance and reliability of memory devices.
Latest Patents
Among his latest contributions to the field, Hoei has developed two significant patents. The first, titled "Adaptive Read Disturb Scan," presents apparatuses, systems, and methods for optimizing a read disturb scan. This innovation involves determining a delay between consecutive read commands and adapting the scan rate accordingly to improve memory functionality. The second patent, "Monitoring Flash Memory Erase Progress Using Erase Credits," outlines a method to monitor the progress of erase operations in memory devices through an erase credit mechanism. This approach enables accurate tracking of the extent of memory erasure and ensures that operations are efficiently terminated upon reaching predefined thresholds.
Career Highlights
Jung Sheng Hoei has made notable contributions during his tenure at leading technology companies such as Micron Technology Incorporated and Information Storage Devices, Inc. His work in these organizations has been instrumental in pushing the boundaries of memory technology and its applications.
Collaborations
Throughout his career, Hoei has collaborated with talented professionals, including Vishal Sarin and Kishore Kumar Muchherla. Their collective efforts have propelled innovative research and development within the realm of memory solutions.
Conclusion
Jung Sheng Hoei's extensive patent portfolio and collaborative spirit highlight his status as a pivotal figure in the field of memory technology. His ongoing contributions continue to influence the industry, paving the way for future advancements in data storage and management.
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