Micron Technology Incorporated

Information Storage Devices, Inc.

Intel Corporation

Jung Sheng Hoei

Vishal Sarin

Kishore Kumar Muchherla

Frankie F Roohparvar

Harish Reddy Singidi

Sampath K Ratnam

Jiangang Wu

Qisong Lin

Jianmin Huang

Renato C Padilla

Peter Sean Feeley

Ashutosh Malshe

Ali Mohammadzadeh

Sivagnanam Parthasarathy

Xiangang Luo

Terry M Grunzke

Michael G Miller

Akira Goda

Dheeraj Srinivasan

Peng-Cheng Chen

Jonathan Scott Parry

Ting Luo

Preston Allen Thomson

Gary F Besinga

Gianni Stephen Alsasua

Roland J Awusie

Nicola Ciocchini

Frankie F Roohpavar

Animesh Roy Chowdhury

Rohitkumar Makhija

Aaron S Yip

Luca De Santis

Michele Piccardi

Mark Ish

Karl David Schuh

Horia Cristian Simionescu

Walter Di Francesco

Giulio-Giuseppe Marotta

Lawrence D Engh

Gianfranco Valeri

Ankit Vinod Vashi

Vamshi K Indavarapu

Lucia Botticchio

Mark Alan Helm

Giuseppe Cariello

Abdelhakim Alhussien

Xiaojiang Guo

Scott Anthony Stoller

Ugo Russo

Fulvio Rori

Dzung Huu Nguyen

Niccolo' Righetti

William Saiki

Jonathan Pabustan

Peng Xu

Niccolo′ Righetti

Sri Rama Namala

Sead Zildzic

Jason Guo

Kalyan Chakravarthy C Kavalipurapu

Yunqiu Wan

Manan Tripathi

Peng Fei

Dzung Nguyen

Violante Moschiano

Hagop A Nazarian

Zhenming Zhou

Tommaso Vali

Patrick Robert Khayat

James Fitzpatrick

June Lee

Jeffrey S McNeil, Jr

Lei Zhou

Daniel J Hubbard

Umberto Siciliani

Zhongguang Xu

Guang Hu

Frankie E Roohparvar

Andrea Giovanni Xotta

David Sowards

May Lee

Guido Luciano Rizzo

Nolan Tran

Myoung Jun Go

Jing Sang Liu

Vashal Sarin

Xiaoxiao Zhang

Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to generate virtual or superblocks using multiple partial good blocks. The controller identifies a first partial good block (PGB) in a set of memory components, the first PGB having first subset of word line groups (WGRs) that are categorized as being non-defective. The controller searches for a second PGB in the set of memory components having a second subset of WGRs that are categorized as being non-defective. The controller computes a total quantity of WGRs based on the first quantity of WGRs in the first subset of WGRs and a second quantity of WGRs in the second subset of WGRs and, in response, combines the first PGB and the second PGB to form an individual virtual block.

Generating virtual blocks using partial good blocks

A system includes a memory device including multiple memory cells and a processing device operatively coupled to the memory device. The processing device is to receive a first read command at a first time. The processing device is further to receive a second read command at a second time. The processing device is further to determine that the first read command and the second read command are directed to an at least partially same set of memory cells of the plurality of memory cells. The processing device is further to perform a media management operation with respect to the at least partially same set of memory cells.

Modified read counter incrementing scheme in a memory sub-system

A processing device access a command to program data to a page in a block of a memory device. The processing device determines whether the page is a last remaining open page in the block. The processing device accesses a list that indicates enablement of a function to apply read level offsets to one or more open blocks in the memory device. The processing device determines the list includes an entry that matches to the block. The entry indicates enablement of the function to apply read level offsets to the block. The processing device disables the function based on determining the page is a last remaining open page in the block. The processing device adds the command to a prioritized queue of commands. The memory device executes commands from the prioritized queue in an order based on a priority level assigned to each command.

Automatic wordline status bypass management

A memory device includes a memory array comprising a plurality of memory planes, wherein the plurality of memory planes are arranged in a plurality of independent plane groups, and wherein each of the plurality of independent plane groups comprises one or more of the plurality of memory planes. The memory device further includes a plurality of independent analog driver circuits coupled to the memory array, wherein a respective one of the plurality of independent analog driver circuits is associated with a respective one of the plurality of independent plane groups. The memory device further includes a common analog circuit coupled to the memory array, wherein the common analog circuit is shared by the plurality of independent analog driver circuits and the plurality of independent plane groups. The memory device further includes a plurality of control logic elements, wherein a respective one of the plurality of control logic elements is associated with a respective one of the plurality of independent analog driver circuits and a respective one of the plurality of independent plane groups.

Independent plane architecture in a memory device

Apparatuses, systems, and methods for adapting a read disturb scan. One example method can include determining a delay between a first read command and a second read command, incrementing a read count based on the determined delay between the first read command and the second read command, and adapting a read disturb scan rate based on the incremented read count.

Adaptive read disturb scan

The progress of an erase operation for a memory device is monitored using an erase credit mechanism. In one approach, an erase operation is performed to erase a memory. Erase pulse slices used in the erase operation are monitored. Erase credits associated with the erase operation are determined. The erase credits include an erase credit associated with each of the erase pulse slices. Based on the erase credits, an extent of erasure of the memory is determined. In response to determining that the extent of erasure has reached a predetermined threshold, the erase operation is terminated.

Monitoring flash memory erase progress using erase credits

Methods, systems, and apparatuses include receiving a read command including a logical address. The read command is directed to a portion of memory composed of blocks and each block is composed of wordline groups. The physical address for the read command is identified using the logical address. The wordline group is determined using the physical address. A slope factor is retrieved using the wordline group. A read counter is incremented using the slope factor.

Read counter adjustment for delaying read disturb scans

Control logic in a memory device receives a request to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, and determines whether a write temperature associated with the data is stored in a flag byte corresponding to the segment of the memory array. Responsive to determining that the write temperature associated with the data is stored in the flag byte, the control logic determines a cross-temperature for the data based on the write temperature and a read temperature at a time when the request to read the data is received, determines a program/erase cycle count associated with the segment of the memory array, and determines, based on the cross-temperature and the program/erase cycle count, whether to perform a corrective action to calibrate a read voltage level to be applied to the memory array to read the data from the segment.

On-die cross-temperature management for a memory device

Methods, systems, and devices for full multi-plane operation enablement are described. A flash controller can determine that a first plane of a set of planes of a memory die is an invalid plane. The flash controller can issue a single descriptor associated with a multi-plane operation for the set of planes of the memory die. The single descriptor can include a plurality of commands for the multi-plane operation in which the first command of the plurality of commands can be a duplicate of a second command of the plurality of commands based on the first plane being the invalid plane. In some cases, a negative-and (NAND) controller can receive the single descriptor associated with the multi-plane operation for the set of planes of a memory die. The NAND controller can issue a plurality of commands for the multi-plane operation based on receiving the single descriptor.

Full multi-plane operation enablement

A system includes a memory device including multiple memory cells and a processing device operatively coupled to the memory device. The processing device is to receive a first read command at a first time. The first read command is with respect to a set of memory cells of the memory device. The processing device is further to receive a second read command at a second time. The second read command is with respect to the set of memory cells of the memory device. The processing device is further to increment a read counter for the memory device by a value reflecting a difference between the first time and the second time. The processing device is further to determine that a value of the read counter satisfies a threshold criterion. The processing device is further to perform a data integrity scan with respect to the set of memory cells.

A request to perform a write operation at a memory device is received. Current wordline start voltage (WLSV) information associated with a particular memory segment of the plurality of memory segments is retrieved. The write operation is performed on the particular memory segment. In a firmware record in a memory sub-system controller, information is stored indicative of a last written memory page associated with the particular memory segment on which the write operation is performed. The firmware record is managed in view of the information indicative of the last written memory page associated with the performed write operation. Each entry of the firmware record comprises one or more identifying indicia associated with a respective memory segment, at least one of the identifying indicia being a wordline start voltage (WLSV) associated with the respective memory segment.

Memory sub-system management based on dynamic control of wordline start voltage

A request to perform a program operation at a memory device is received. Whether a firmware block record is to be modified to correspond with a device block record is determined based on parameters associated with the program operation. The firmware block record tracks entries of the device block record. Responsive to determining that the firmware block record is to be modified, the firmware block record is modified to correspond with the device block record.

Memory sub-system management of firmware block record and device block record

A method can include receiving, by a first controller component of a memory sub-system, a read operation, responsive to receiving the read operation, interrupting, by the first controller component, one or more program operations being performed by the memory sub-system, receiving, by the first controller component, a control sequence from a second controller component, wherein the control sequence is based on context data associated with the interrupted one or more program operations, and performing, by the first controller component, the control sequence by copying data of the interrupted one or more program operations from a first memory location to a second memory location of a memory component associated with the memory sub-system, and performing the read operation.

Interruption of program operations at a memory sub-system

The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.

Redundant array of independent NAND for a three-dimensional memory array

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Newark, CA, United States of America

Jung Sheng Hoei