Namyangju-si, South Korea

Jung Ryul Ahn

USPTO Granted Patents = 43 

Average Co-Inventor Count = 1.9

ph-index = 7

Forward Citations = 178(Granted Patents)


Location History:

  • Namyangju, KR (2004)
  • Kyungki-Do, KR (2005 - 2006)
  • Namyangj-Shi, KR (2006)
  • Namyangju-Shi, KR (2006)
  • Namyangiu-Shi, KR (2007)
  • Kyeongki-do, KR (2010)
  • Seoul, KR (2008 - 2013)
  • Gyeonggi-do, KR (2014 - 2018)
  • Namyangju-si, KR (2010 - 2023)

Company Filing History:


Years Active: 2004-2024

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43 patents (USPTO):Explore Patents

Title: Jung Ryul Ahn: Pioneering Innovations in Semiconductor Technology

Introduction:

Throughout his illustrious career, Jung Ryul Ahn, a brilliant inventor and innovator based in Namyangju-si, South Korea, has made substantial contributions to the field of semiconductor technology. His dedication to innovation and commitment to excellence have earned him numerous accolades and recognition worldwide. This article will explore Ahn's latest patents, highlight some of his career milestones, and shed light on his notable collaborations in the industry.

Latest Patents:

Some of Jung Ryul Ahn's latest patents demonstrate groundbreaking advancements in semiconductor device manufacturing methods. One notable patent is for a novel semiconductor device and its manufacturing method. This device includes a unique structure with a substrate, a cell stacked structure, a channel layer, a driving transistor, and a plug structure. The incorporation of multiple contact plugs at a same height as the cell stacked structure allows for enhanced performance and improved manufacturing efficiency.

Another patent showcases Ahn's innovation in a semiconductor device consisting of first and second stack structures, a first insulating layer with protrusion parts, and a second insulating layer. This design enables better integration between stack structures and provides better conductivity, contributing to enhanced overall device performance.

Career Highlights:

Over the course of his career, Jung Ryul Ahn has achieved remarkable success and marked several significant milestones. With an impressive portfolio of 42 patents, he has firmly established himself as a leading figure in semiconductor technology. Ahn's relentless pursuit of innovation has propelled him to the forefront of the industry, earning him a reputation for precision and excellence in his work.

Collaborations:

Throughout his career, Jung Ryul Ahn has collaborated with some of the industry's brightest minds, including Jum Soo Kim and Yun Kyoung Lee. These fruitful collaborations have resulted in the development of groundbreaking technologies, leading to advancements in semiconductor manufacturing processes. By leveraging their collective expertise and fostering a culture of collaboration, Ahn and his colleagues have positioned themselves as key contributors to the ever-evolving semiconductor industry.

Conclusion:

Jung Ryul Ahn's influence and contributions in the field of semiconductor technology are truly remarkable. With a track record of innovation, he continues to revolutionize the industry with his pioneering inventions and patents. As a dedicated innovator, Ahn's commitment to excellence and tireless pursuit of advancement have solidified his position as a leading figure in the world of semiconductor technology. We eagerly look forward to witnessing his future contributions and the transformative impact they will undoubtedly have on the industry.

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