The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Apr. 22, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Yun Kyoung Lee, Seoul, KR;
Jung Ryul Ahn, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/764 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 27/11521 (2017.01); H01L 21/76 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66825 (2013.01); H01L 21/28273 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 21/764 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 27/11521 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/42336 (2013.01); H01L 29/7881 (2013.01); H01L 21/76 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract
A semiconductor memory device and a method of manufacturing the same are provided. The device includes a semiconductor substrate in which active regions and isolation regions are alternately defined, and a support region is defined in a direction crossing the active regions and the isolation regions, first trenches formed in the isolation regions, second trenches formed under the first trenches in the active regions and the isolation regions; and a support layer formed under the first trenches in the support region.