The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Apr. 28, 2021
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Sang Yong Lee, Cheongju-si, KR;

Sang Min Kim, Seoul, KR;

Jung Ryul Ahn, Namyangju-si, KR;

Sang Hyun Oh, Anyang-si, KR;

Seung Bum Cha, Seoul, KR;

Kang Sik Choi, Seongnam-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 25/065 (2006.01); H01L 27/06 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 25/0657 (2013.01); H01L 27/0688 (2013.01); H01L 27/11556 (2013.01);
Abstract

A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.


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