Jun-Chi Huang

Title: Jun-Chi Huang: Innovator in Memory Device Technology

Introduction

Jun-Chi Huang is an inventor based in Dali City, Taiwan. He has made significant contributions to the field of memory devices, particularly through his innovative patent application. Although he currently holds no granted patents, his work demonstrates a commitment to advancing technology in this area.

Latest Patent Applications

Jun-Chi Huang's notable patent application is titled "STRUCTURE OF MEMORY DEVICE AND PROCESS FOR FABRICATING THE SAME." This application discloses a structure of a memory cell for a static random memory device and outlines a process for fabricating it. The memory cell includes a substrate with an active region that features an N-well and a shallow trench isolation structure. It also describes the formation of a first gate and a second gate over the substrate, along with a halo region, a LLD, and source and drain regions on either side of the first gate. Additionally, an interlevel dielectric layer covers the substrate and gates, with a contact that penetrates the dielectric layer and extends to the source and drain regions, ensuring no halo region is formed under the contact.

Conclusion

Jun-Chi Huang's work in memory device technology showcases his innovative spirit and dedication to research. His patent application reflects a significant step forward in the development of memory cell structures.