The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Mar. 20, 2006
Jun-chi Huang, Taichung County, TW;
Chia-wen Liang, Hsinchu, TW;
Yung-chang Lin, Taichung Hsien, TW;
Richard Lee, Taichung, TW;
Jun-Chi Huang, Taichung County, TW;
Chia-Wen Liang, Hsinchu, TW;
Yung-Chang Lin, Taichung Hsien, TW;
Richard Lee, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A static random access memory (SRAM) unit comprising a substrate, a gate dielectric layer, a gate, a trench capacitor, a pair of source/drain regions, a first contact and a second contact is provided. The substrate has a trench formed therein. The gate dielectric layer is disposed on the substrate and the gate is disposed on the gate dielectric layer. The trench capacitor is disposed in the trench near one side of the gate. The source/drain regions are disposed in the substrate near the respective sides of the gate with one of the source/drain region positioned between the gate and the trench capacitor. The first contact is electrically connected to the trench capacitor and the second contact is electrically connected to the other source/drain region.