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For the Inventor, By the Inventor

Grenoble, France

Julien Buckley

This inventor holds 23 USPTO granted patents and 6 published patent applications and 16 EPO patents, primarily in Semiconductor Technology. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Centre National De La Recherche Scientifique, Université Joseph Fourier. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Julien Buckley. Retrieved from https://idiyas.com/inventor/julien-buckley

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 82.6

 

Average Co-Inventor Count = 2.2

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal23 out of 8,851 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal2 out of 5,384 
 
Centre National De La Recherche Scientifique
 patents
bronzeMedal1 out of 112 
 
Université Joseph Fourier
 patents
where one patent can have more than one assignee

Years Active: 2011-2026

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Areas of Expertise:
Field Effect Transistor
Semiconductor Diode
Micro-Electronic Device
Power Device
Heterojunction Transistor
Optocoupler
High Electron Mobility Transistor
Electronic Logic Module
Integrated Circuit
Photovoltaic Cells
Junction Barrier Schottky Diode
Biological Detection Chip
23 patents (USPTO):Explore Patents
1. 12796033 - Vertical- structure field effect transistor having a III-N semiconductor layer with face having a polarity of the nitrogen type and a channel layer forming a heterostructure with a drift layer (2026-11-10),
2. 12550399 - Field effect transistor with p-FET type behaviour (2026-02-10),
3. 12527057 - Micro-electronic device with insulated substrate, and associated manufacturing method (2026-01-13),
4. 12278224 - Method for producing nitride mesas each intended to form an electronic or optoelectronic device (2025-04-14),
5. 12218254 - Semiconductor diode and method of manufacturing such a diode (2025-02-04),
6. 11838016 - Transistor association (2023-12-05),
7. 11824000 - Field effect transistor and associated manufacturing method (2023-11-21),
8. 11489067 - Electron gas transistor, one-piece device comprising at least two transistors in cascode and associated manufacturing methods (2022-11-01),
9. 11398547 - Junction barrier Schottky diode (2022-07-26),
10. 11316009 - Electronic power device with super-junction (2022-04-26),
11. 11189716 - Open type heterojunction transistor having a reduced transition resistance (2021-11-30),
12. 11158629 - Polarization circuit of a power component (2021-10-26),
13. 11063165 - Optocoupler (2021-07-13),
14. 10879383 - High electron mobility transistor and method of fabrication having reduced gate length and leak current (2020-12-29),
15. 10651845 - Inverter branch driver (2020-05-12),

Title: Julien Buckley: Innovator in Semiconductor Technology

Introduction: Julien Buckley is a prominent inventor based in Grenoble, France, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 19 patents, his innovative designs and methodologies have made a lasting impact in the field. His work focuses on enhancing the efficiency and functionality of semiconductor devices, which play a crucial role in modern electronics.

Latest Patents: Julien's latest patents include groundbreaking inventions such as a semiconductor diode and a method for its manufacturing. This semiconductor diode features a first doped semiconductor region of a first conductivity type and a second doped semiconductor region of an opposite conductivity type, allowing for enhanced performance. Another notable patent is his work on a transistor association circuit designed to power loads effectively. This circuit incorporates field-effect transistors and integrates sensors that provide real-time information on current flow, showcasing his ability to blend innovation with practical applications.

Career Highlights: Julien has had an impressive career, marked by his tenure at prestigious organizations like the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Commissariat à l'Énergie Atomique. His roles in these institutions have provided him with the platform to advance his research and develop state-of-the-art technologies.

Collaborations: Throughout his career, Julien has worked alongside talented individuals, including coworkers Yannick Baines and Haykel Ben Jamaa. Their collaborative efforts have fostered an environment of creativity and innovation, pushing boundaries in semiconductor research.

Conclusion: Julien Buckley's contributions to the world of semiconductor technology are noteworthy and continue to influence the industry. With his extensive patent portfolio and collaborative spirit, he stands as a leading figure in the field of innovations and inventions, paving the way for future advancements in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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